irfhm9391trpbf hexfet ? power mosfet base part number package type standard pack orderable part number ? ? form quantity irfhm9391pbf pqfn 3.3mm x 3.3mm tape and reel 4000 irfhm9391trpbf v dss -30 v r ds(on) max (@ v gs = -10v) 14.6 ? (@ v gs = -4.5v) 22.5 qg (typical) 32 nc i d (@t a = 25c) -11 a m ??? ? pqfn 3.3 x 3.3 mm features benefits low thermal resistance to pcb (<3.8c/w) enable better thermal dissipation low profile (<1.05 mm) results in increased power density industry-standard pinout ?? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1,consumer qualification increased reliability notes ? through ? are on page 9 absolute maximum ratings ?? parameter max. units v gs gate-to-source voltage 25 v i d @ t a = 25c continuous drain current, v gs @ 10v -11 a ? i d @ t a = 70c continuous drain current, v gs @ 10v -9.0 i dm pulsed drain current -90 i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v -38 ?? i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v -24 ?? i d @ t c = 25c continuous drain current, v gs @ 10v (source bonding technology limited) -24 ? p d @t a = 25c power dissipation ? 2.6 w p d @t c(bottom) = 25c power dissipation ? 33 linear derating factor ? 0.021 w/c t j operating junction and -55 to + 150 c t stg storage temperature range applications ?? system/load switch, ?? charge or discharge switch for battery protection ? d d d d s s s g4 3 2 1 5 7 6 8 1 www.irf.com ? 2014 international rectifier submit datasheet feedback july 01, 2014
? irfhm9391trpbf 2 www.irf.com ? 2014 international rectifier submit datasheet feedback july 01, 2014 static @ t j = 25c (unless otherwise specified) ???? parameter min. typ. max. units conditions bv dss drain-to-source breakdown voltage -30 ??? ??? v v gs = 0v, i d = -250a ? bv dss / ? t j breakdown voltage temp. coefficient ??? 0.02 ??? v/c reference to 25c, i d = -1ma r ds(on) static drain-to-source on-resistance ??? 10 ??? m ? v gs = -20v, i d = -11a ? ??? 11.7 14.6 ? v gs = -10v, i d = -11a ? ??? 18 22.5 ? v gs = -4.5v, i d = -11a ? v gs(th) gate threshold voltage -1.3 -1.8 -2.4 v v ds = v gs , i d = -25a ? v gs(th) gate threshold voltage coefficient ??? -5.1 ??? mv/c i dss ??? ??? -1.0 a v ds = -24v, v gs = 0v ??? ??? -150 v ds = -24v, v gs = 0v,t j = 125c i gss gate-to-source forward leakage ??? ??? -10 a v gs = -25v gate-to-source reverse leakage ??? ??? 10 v gs = 25v gfs forward transconductance 16 ??? ??? s v ds = -10v, i d = -9.0a q g total gate charge ??? 16 ??? nc v gs = -4.5v, v ds =-15v, i d = -9.0a q g total gate charge ??? 32 48 q gs1 pre-vth gate-to-source charge ??? 3.0 ??? ? v ds = -15v q gs2 post-vth gate-to-source charge ??? 1.4 ??? nc v gs = -10v q gd gate-to-drain charge ??? 8.0 ??? ? i d = -9.0a q godr gate charge overdrive ??? 19.6 ??? ? q sw switch charge (q gs2 + q gd ) ??? 9.4 ??? ? q oss output charge ??? 9.0 ??? nc v ds = -16v, v gs = 0v r g gate resistance ??? 16 ??? ? ? t d(on) turn-on delay time ??? 11 ??? v dd = -15v, v gs = -4.5v ? t r rise time ??? 27 ??? ns i d = -1.0a t d(off) turn-off delay time ??? 72 ??? ? r g =6.8 ? t f fall time ??? 60 ??? ? c iss input capacitance ??? 1543 ??? v gs = 0v c oss output capacitance ??? 310 ??? pf v ds = -25v c rss reverse transfer capacitance ??? 208 ??? ? ? = 1.0khz drain-to-source leakage current ? ??? parameter typ. max. units r ? jc (bottom) junction-to-case ? ??? 3.8 r ? jc (top) junction-to-case ? ??? 42 c/w r ? ja junction-to-ambient ? ??? 47 r ? ja (<10s) junction-to-ambient ? ??? 32 thermal resistance g d s diode characteristics ???? parameter min. typ. max. units conditions i s continuous source current ??? ??? -2.8 mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? -90 integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage ??? ??? -1.2 v t j = 25c, i s = -2.8a, v gs = 0v ?? t rr reverse recovery time ??? 64 96 ns t j = 25c, i f = -2.8a, v dd = -24v q rr reverse recovery charge ??? 25 38 nc di/dt = 100a/s ? a ? avalanche characteristics ?? parameter typ. max. units e as single pulse avalanche energy ? ??? 75 mj
? irfhm9391trpbf 3 www.irf.com ? 2014 international rectifier submit datasheet feedback july 01, 2014 fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs . gate-to-source voltage fig 3. typical transfer characteristics fig 2. typical output characteristics 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -10v -5.0v -4.5v -3.5v -3.3v -3.1v -2.9v bottom -2.7v ? 60s pulse width tj = 25c -2.7v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 150c -2.7v vgs top -10v -5.0v -4.5v -3.5v -3.3v -3.1v -2.9v bottom -2.7v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = -11a v gs = -10v 1 10 100 -v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 khz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 5 10 15 20 25 30 35 40 45 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -24v v ds = -15v vds= -6v i d = -9a 1.5 2 2.5 3 3.5 4 4.5 5 5.5 -v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = -15v ? 60s pulse width
? irfhm9391trpbf 4 www.irf.com ? 2014 international rectifier submit datasheet feedback july 01, 2014 fig 8. maximum safe operating area fig 7. typical source-drain diode forward voltage fig 9. maximum drain current vs. case temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 - v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = -25ua fig 10. threshold voltage vs. temperature fig 11. maximum effective transient thermal impedance, junction-to-case 0.4 0.6 0.8 1.0 1.2 -v sd , source-to-drain voltage (v) 1.0 10 100 1000 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r ma l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + t a 25 50 75 100 125 150 t a , ambient temperature (c) 0 2 4 6 8 10 12 - i d , d r a i n c u r r e n t ( a ) 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc
? irfhm9391trpbf 5 www.irf.com ? 2014 international rectifier submit datasheet feedback july 01, 2014 fig 12. on? resistance vs. gate voltage fig 13. maximum avalanche energy vs. drain current fig 14. typical avalanche current vs. pulsewidth 0 5 10 15 20 25 -v gs, gate -to -source voltage (v) 5 10 15 20 25 30 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = -11a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 50 100 150 200 250 300 350 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top -3.2a -4.5a bottom -9.0a 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.01 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart =25c (single pulse)
? irfhm9391trpbf 6 www.irf.com ? 2014 international rectifier submit datasheet feedback july 01, 2014 fig 15. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 18. gate charge test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 19. gate charge waveform fig 17a. switching time test circuit fig 17b. switching time waveforms fig 16a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v t p v (br)dss i as fig 16b. unclamped inductive waveforms
? irfhm9391trpbf 7 www.irf.com ? 2014 international rectifier submit datasheet feedback july 01, 2014 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ pqfn 3.3 x 3.3 package details pqfn 3.3 x 3.3 part marking for more information on board mounting, including footprint and stencil recommendation, please refer to application note an-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf for more information on package inspection techniques, please refer to application note an-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf
? irfhm9391trpbf 8 www.irf.com ? 2014 international rectifier submit datasheet feedback july 01, 2014 pqfn 3.3 x 3.3 tape and reel note: for the most current drawing please refer to ir website at http://www.irf.com/package/ bo w p 1 ao ko code tape dimensions reel dimensions quadrant assignments for pin 1 orientation in tape dimension design to accommodate the component width dimension design to accommodate the component lenght dimension design to accommodate the component thickness pitch between successive cavity centers overall width of the carrier tape bo w p 1 ao ko dimension (mm) code min max dimension (inch) min max 3.50 3.70 .138 .146 1.10 1.30 7.90 8.10 .043 .051 11.80 12.20 .311 .319 12.30 12.50 .465 .480 .484 .492 3.50 3.70 .138 .146 description w 1 qty 4000 reel diameter 13 inches ? ? ?
? irfhm9391trpbf 9 www.irf.com ? 2014 international rectifier submit datasheet feedback july 01, 2014 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ notes: ? ? starting t j = 25c, l = 1.872mh, r g = 50 ? , i as = -9a. ? pulse width ? 400s; duty cycle ? 2%. ? r ? is measured at tj of approximately 90c. ? when mounted on 1 inch square pcb (fr-4). please refer to an-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf ? calculated continuous current based on maxi mum allowable junction temperature. ? current is limited by source bonding technology. ? ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. qualification information ? ? qualification level moisture sensitivity level pqfn 3.3mm x 3.3mm msl1 (per jedec j-std-020d ?? ) rohs compliant yes consumer ?? (per jedec jesd47f guidelines) revision history date comments 7/1/14 ?? remove ?sawn? package outline on page 7. ?? updated part marking on page 7. ?? updated tape and reel on page 8.
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